• IC Grade Amorphous Silicon Dice Specification 3 Solar Silicon Wafer System 1
IC Grade Amorphous Silicon Dice Specification 3 Solar Silicon Wafer

IC Grade Amorphous Silicon Dice Specification 3 Solar Silicon Wafer

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Pv modules at present, the mainstream products are still in silicon as the main raw materials, only in terms of silicon raw material consumption, production 1 mw of crystalline silicon solar cell, need 10 to 12 tons of high purity silicon, but if use the same silicon materials used to produce thin film amorphous silicon solar cell can produce more than 200 mw.

From the perspective of energy consumption, amorphous silicon solar battery only 1-1.5 years of energy recovery period, more embodies its contribution to energy saving in the manufacturing process.

Component occupies a high proportion of costs in a photovoltaic system, the component prices directly affect the system cost, and thus affect the cost of photovoltaic power generation. Calculated at the current price of components, the same money, buy amorphous silicon products, you can get more close to 30% of the power components.

2, more power

For the same power of solar cell array, amorphous silicon solar cell is about 10% more than monocrystalline silicon, polycrystalline silicon battery power. This has been the Uni - Solar System LLC, Energy Photovoltaic Corp., Japan's Kaneka Corp., the Netherlands Energy research institute, and other organizations and experts confirmed that the Photovoltaic industry.

In sunny, that is to say, under the high temperature, amorphous silicon solar cell components can show more excellent power performance.


3, better low light response

Due to the characteristics of amorphous silicon atoms are arranged disorderly, the electron transition no longer comply with the restriction of traditional \"selection rule\", as a result, its light absorption characteristics and there are big differences monocrystalline silicon material. Amorphous silicon and monocrystalline silicon material absorption curve as shown

, amorphous silicon absorption curve has obvious three sections (A, B, C). Area A corresponding electronic transition between localized states, such as the gap state near Fermi level and to the tail state transition, the absorption coefficient is small, about 1-10 cm - 1, for this is absorbing; B area absorption coefficient with the increase of the photon energy index rose, it corresponds to the electrons from the valence band edge extension state to the conduction band localized state transition, as well as the localized electrons from the valence band tail states guide for edge extension state transition, the region's energy range is usually only about half of the electron volts, but absorption coefficient across two or three orders of magnitude, usually up to 104 cm - 1; Area C corresponds to the electrons from the valence band to the conduction band internal internal transition, the absorption coefficient is bigger, often in more than 104 cm - 1. After two absorption area is crystalline silicon eigen absorption area.

Can be seen in the figure, the intersection of two curves about 1.8 ev. It is important to note that in the visible light range (1.7 to 3.0 ev), the absorption coefficient of amorphous silicon material is almost an order of magnitude larger than the single crystal silicon. That is to say, in the morning the first part of the sun is not too strong, the second half, and it's cloudy in the afternoon under the condition of low light intensity, long wave is greater, the amorphous silicon material still has a large absorption coefficient. Again considering the amorphous silicon band gap is larger, the reverse saturation current I0 is smaller. And as mentioned the amorphous silicon battery the characteristics I - V characteristic curve of the amorphous silicon solar cell both in theory and in practical use in low light intensity has good adaptation.

• I - V characteristics of amorphous silicon cells after more than a Vm with the voltage drop slowly


In order to be convenient, we draw the I - V characteristics of two kinds of batteries on the same picture. Crystalline silicon and amorphous silicon battery I - V characteristics of general shape as shown

 we see from the picture, two kinds of cells in the curve changes after exceed the maximum output power point gap is bigger. Output current of crystalline silicon cells after exceed the maximum output power point will soon fall to zero, curve steep; Rather than crystalline silicon cells output current after a long distance to fall to zero, the curve is relatively flat. Two kinds of battery Vm equivalent to about 83% of its open circuit voltage and 83% respectively.

 when light intensity gradually become hour, short circuit current and open circuit voltage of solar battery will be stronger. Short circuit current decreases faster, of course, open circuit voltage decrease more slowly.

 do in battery solar cell array under the condition of load, when the sun battery array of effective output voltage less than the terminal voltage of battery, battery cannot be recharged. When the light intensity gradually become hour, crystal silicon battery charging does not meet the conditions, and amorphous silicon due to the larger voltage difference, do not charge until the light is very dark, effectively increase the use of sunlight time. So, amorphous silicon cells to produce more electricity than the crystalline silicon.

4, more excellent high temperature performance

High in the outdoor environment temperature, amorphous silicon solar cell performance change, depends on the temperature, spectrum, as well as other related factors. But what is certain is: amorphous silicon than monocrystalline silicon or polycrystalline silicon are less likely to be affected by temperature.

Amorphous silicon solar cells than monocrystalline silicon, polycrystalline silicon cells have relatively small temperature coefficient of amorphous silicon solar cell output power best Pm temperature coefficient is about 0.19%, and monocrystalline silicon, polycrystalline silicon cells best output power Pm temperature coefficient is about 0.5%, when the battery work at higher temperatures, the two batteries will be a drop in the Pm, but the decline is different. They can be calculated using the following formula.


Q: How is the doping level of a solar silicon wafer controlled?
The doping level of a solar silicon wafer is controlled through a process called ion implantation. In this process, specific dopant atoms are introduced into the silicon wafer by bombarding it with high-energy ions. The dopant atoms replace some of the silicon atoms in the crystal lattice, altering its electrical properties. The concentration and distribution of dopant atoms are carefully controlled to achieve the desired doping level, which helps in optimizing the performance of solar cells.
Q: What is the weight of a solar silicon wafer?
The weight of a solar silicon wafer can vary depending on its size and thickness. On average, a standard silicon wafer used in solar panels typically weighs around 4 to 7 grams.
Q: What is the thickness of the semiconductor wafer used today?I have consulted some for solar wafers, heard now that the wafer thickness in 200~400 micron, but we need the wafer thickness requirements for high now, that for semiconductor wafer thickness is slightly higher than the solar energy, but I do not know how much is there in about 1 mm
For integrated circuits: generally 4 inch wafer thickness of 0.520mm, the thickness of the 6 inch wafer
Q: Are solar silicon wafers flexible?
No, solar silicon wafers are not flexible. They are rigid and typically made from crystalline silicon, which is a brittle material.
Q: How are solar silicon wafers protected from electrical surges?
Solar silicon wafers are protected from electrical surges through the use of protective devices such as surge suppressors and transient voltage suppressors. These devices are installed in the solar power system to divert excess voltage and current away from the wafers, preventing damage to the delicate electronic components.
Q: The significance of silicon wafer heat treatment
Heat treatment at 650 DEG C, under the condition of rapid cooling (that is, rapidly over the temperature of 450 DEG C), the thermal donor can be eliminated. That is, we can observe that the resistivity of N sample is high, and the resistivity of P sample is low.Precipitation: 800-1200 DEG C, on behalf of temperature 1050 degrees CHeat treatment at 1050 DEG C, will bring oxygen precipitation, and the formation of defects caused by precipitation defects.Restore: > 1200
Q: How do solar silicon wafers handle shading or partial obstruction?
Solar silicon wafers are generally designed to handle shading or partial obstruction quite well. While shading can reduce the overall energy output of a solar panel, modern panels are equipped with bypass diodes that allow electricity to flow around the shaded or obstructed cells, ensuring continuous power generation. Additionally, advanced panel designs and installation techniques help minimize the impact of shading, such as using microinverters or power optimizers that maximize the energy harvest from each individual cell. Overall, solar silicon wafers are engineered to withstand partial shading and obstruction, ensuring efficient energy production even under suboptimal conditions.
Q: How is a solar silicon wafer cut?
A solar silicon wafer is typically cut using a wire saw or a diamond saw. The process involves feeding a wire or a blade made of diamond crystals through the silicon ingot, which is slowly rotated and sliced into thin wafers. This method ensures precision and minimal material loss during the cutting process.
Q: Are there any alternatives to solar silicon wafers?
Yes, there are alternatives to solar silicon wafers. Some alternative materials that can be used for solar cells include thin-film technologies such as cadmium telluride (CdTe), copper indium gallium selenide (CIGS), and organic photovoltaics (OPV). These alternatives offer different advantages and disadvantages compared to silicon wafers, such as lower production costs, flexibility, and higher efficiency in certain conditions. However, silicon wafers remain the dominant material for solar cells due to their well-established technology and high efficiency.
Q: What is the maximum voltage a solar silicon wafer can handle?
The maximum voltage that a solar silicon wafer can handle depends on various factors such as the wafer's thickness, quality, and design. However, in general, solar silicon wafers can typically handle voltages up to around 600-1000 volts.

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