• Features:

• Technologies Developed with Funds by the state R&D Programmes of China

• Advanced Anti-ESD and Anti-Intensity-Decay Characteristics

• Efficiency>60lm/w(at 350mA with 40milx40mil Chip size)

• A Series of Products Covering Different Chip Size, Operating Currents and Packaging Requirements.

Semiconductor Lighting Sources: High Power LEDs

• Features:

• Technologies Developed with Funds by the state R&D Programmes of China

• Home-made or Imported Chips Used for the Highest Radio of Performance and Cost, Typical Efficiency upto 75lm/w

• Advanced Anti-ESD and Anti-Intensity-Decay Characteristics. All the Chips Pass 100% Opto-Electric and ESD Level Tests.

• A Series of Products Applicable to Different Packagings, Dimensions, Heat Dissipation Methods and Operating Currents.

Semiconductor Lighting Sources:Back-Lighting Modules

• Features:

• New Generation Green Lighting Source using Anti-ESD and Anti-Intensity-Decay GaN Based Chips.

• The Finest Sorting of LEDs Ensure Most Saturated, colorful and Uniform Light Emitting with Broad Viening Angles(>110°).

• High Efficiency of LEDs Working at Low Voltage at Constant Currents Leads Great Saving in Electricity, Safety in Use and Convenience in Operation.

• Complete Packaging the whole LED board into Epoxy provides IP67 protection, Applicable in the Worst Ourdoor Environments.